Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• -temperature ALD; PEALD; plasma-enhanced ALD; XPS; Introduction The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater

• . However, the sample was exposed to air before measuring XPS and this might be a source for contaminations. Future investigations will be done without breaking the vacuum prior to the XPS measurements. Conclusion A plasma-enhanced ALD process for Co metal deposition based on [Co2(CO)6HC≡CC5H11] and H2

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• fractions. The calcination of the hybrid layers was investigated in situ with spectroscopic ellipsometry (SE) and X-ray diffraction (XRD). Oxygen plasma was used as co-reactant together with diethylzinc (DEZ) in a room-temperature plasma-enhanced ALD process and, as a function of the plasma time exposure

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• temperature process. It is possible to obtain a high quality Al2O3 film by depositing using a plasma-enhanced ALD process and exploiting trimethylaluminium (TMA) as the metalorganic chemical precursor and O2 as the co-reagent at an optimal growth temperature of 250 °C. Nevertheless, such a temperature is

Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

• Sanghoon Ji,
• Waqas Hassan Tanveer,
• Wonjong Yu,
• Sungmin Kang,
• Gu Young Cho,
• Sung Han Kim,
• Jihwan An and
• Suk Won Cha

Beilstein J. Nanotechnol. 2015, 6, 1805–1810, doi:10.3762/bjnano.6.184

• -supported TF-SOFCs with ALD thin film electrolyte as well as reaction kinetics and ohmic performance. Experimental Thin film fabrication ALD YSZ film was deposited with a showerhead-type plasma-enhanced ALD machine (Atomic Premium, CN1, South Korea) capable of accommodating one six-inch wafer with a radio

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• using the advantages of ALD. Typical ALD processes for the deposition of In2S3 and In2O3 are referenced in Table 1. As ALD processes of In2O3 report relatively small growth rates, we will consider the case of plasma enhancement. Indeed, plasma-enhanced ALD (PEALD), in which various reactive species are

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al₂O₃-films

• Jörg Haeberle,
• Karsten Henkel,
• Hassan Gargouri,
• Franziska Naumann,
• Bernd Gruska,
• Michael Arens,
• Massimo Tallarida and
• Dieter Schmeißer

Beilstein J. Nanotechnol. 2013, 4, 732–742, doi:10.3762/bjnano.4.83

• the last decade the research have been extended to plasma enhanced ALD (PE-ALD) in which the H2O as oxygen source is replaced by a plasma exposure (O2, O3) [1][17][18]. Caused by the higher reactivity of the plasma generated oxygen radicals the PE-ALD extends the capabilities of ALD such as improved

• successfully produced by standard thermal (200 °C) and plasma enhanced ALD in the SENTECH SI ALD LL system at substrates temperatures ranging from 200 °C down to rt. Comparing the 200 °C processes similar refractive indices of 1.64 and oxygen to aluminum elemental ratios near the stoichiometric value of 1.5